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HgCdTe(MCT)多通道檢測模塊

簡要描述:HgCdTe(MCT)多通道檢測模塊提供針對不同波長的四象限和多元線陣探測器模塊,基于HgCdTe材料,集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和風扇。

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  • 更新時間:2024-10-09
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HgCdTe(MCT)多通道檢測模塊

VIGO Photonics 提供針對不同波長的四象限和多元線陣探測器模塊,基于HgCdTe材料,集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和風扇。四象限模塊適合用于測量光束的移動或作為對準系統(tǒng)的反饋;多元線陣探測器多用于非接觸式的溫度測量,常用于鐵路運輸。除標準5μm和10.6μm模塊,根據(jù)不同應(yīng)場景,可接受定制。


四象限模塊

1、QM-5,四象限,制冷模塊,光敏面4×(0.2×0.2)

Specification (Ta = 20°C)
ParameterTypical value
Optical characteristics
Cut-on wavelength λcut-on (10%), µm3.5±0.5
Peak wavelength λpeak, µm4.5±0.5
Optimum wavelength λopt, µm5
Cut-off wavelength λcut-off (10%), µm6.0±0.5
Detectivity D*(λpeak), cm·Hz1/2/W≥7.0×109
Detectivity D*(λopt), cm·Hz1/2/W≥6.8×109
Output noise density vn(100 kHz), nV/Hz1/2≤500
Electrical parameters
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W≥1.7×105
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W≥1.6×105
Low cut-off frequency flo, HzDC
High cut-off frequency fhi, Hz≥1M
Output impedance Rout, Ω50
Output voltage swing Vout (RL = 1 MΩ*)), V0 – 4
Output voltage offset Voff, mVmax ±20
Power supply voltage Vsup, VDC7.5
Power consumption, Wmax 6
Other information
Active elements materialepitaxial HgCdTe heterostructure
Active areas A, mm×mm4×(0.2×0.2)
Distance between active elements, mm0.02
WindowpSiAR
Acceptance angle Φ~70°
Ambient operating temperature Ta, °C10 to 30
Signal output sockets4×MCX
Power supply socketDC 2.1/5.5
Mounting holeM4
Fanyes

2、QM-10.6,四象限,非制冷模塊,光敏面4×(1×1)

Specification (Ta = 20°C)
ParameterTypical value
Optical characteristics
Cut-on wavelength λcut-on (10%), µm3.0±1.0
Peak wavelength λpeak, µm8.0±2.0
Optimum wavelength λopt, µm10.6
Cut-off wavelength λcut-off (10%), µm12.0±1.0
Detectivity D*(λpeak), cm·Hz1/2/W≥1.0×107
Detectivity D*(λopt), cm·Hz1/2/W≥4.5×106
Output noise density vn(100 kHz) µV/Hz1/2≤4.5
Electrical parameters
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W≥2.2×102
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W≥1.1×102
Low cut-off frequency flo, HzDC
High cut-off frequency fhi, Hz≥1M
Output impedance Rout, Ω50
Output voltage swing Vout(RL = 1 MΩ*)), V0 – 4
Output voltage offset Voff, mVmax ±20
Power supply voltage Vsup, VDC7.5
Power consumption, Wmax 6
Other information
Active elements materialepitaxial HgCdTe heterostructure
Active areas A, mm×mm4×(1×1)
Distance between active elements, mm0.15±0.1
Windownone
Acceptance angle Φ~70°
Ambient operating temperature Ta, °C10 to 30
Signal output sockets4×MCX
Power supply socketDC 2.1/5.5
Mounting holeM4
Fanyes


HgCdTe(MCT)多通道檢測模塊多元線陣模塊

1、4EM-5,1×4線陣,制冷模塊,光敏面4×(0.2×0.2)

Specification (Ta = 20°C)
ParameterTypical value
Optical characteristics
Cut-on wavelength λcut-on (10%), µm3.5±0.5
Peak wavelength λpeak, µm4.5±0.5
Optimum wavelength λopt, µm5
Cut-off wavelength λcut-off (10%), µm6.0±0.5
Detectivity D*(λpeak), cm·Hz1/2/W≥7.0×109
Detectivity D*(λopt), cm·Hz1/2/W≥6.8×109
Output noise density vn(100 kHz), nV/Hz1/2≤500
Electrical parameters
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W≥1.7×105
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W≥1.6×105
Low cut-off frequency flo, HzDC
High cut-off frequency fhi, Hz≥1M
Output impedance Rout, Ω50
Output voltage swing Vout (RL = 1 MΩ*)), V0 – 4
Output voltage offset Voff, mVmax ±20
Power supply voltage Vsup, VDC7.5
Power consumption, Wmax 6
Other information
Active elements materialepitaxial HgCdTe heterostructure
Active areas A, mm×mm4×(0.2×0.2)
Distance between active elements, mm0.05
WindowpSiAR
Acceptance angle Φ~70°
Ambient operating temperature Ta, °C10 to 30
Signal output sockets4×MCX
Power supply socketDC 2.1/5.5
Mounting holeM4
Fanyes

2、4EM-5,1×32線陣,制冷模塊,光敏面4×(0.2×0.2)

Specification (Ta = 20°C, Vb = 0 mV)Detection module type
Parameter
32EM-5-0132EM-5-02
Optical characteristics
Cut-on wavelength λcut-on (10%), µm≤2.03.7±0.2
Peak wavelength λpeak, µm4.25±0.24.75±0.2
Optimal wavelength λopt, µm55
Cut-off wavelength λcut-off (10%), µm5.6±0.25.8±0.2
Detectivity D*(λpeak), cm·Hz1/2/W≥3.5×109≥2.4×109
Detectivity D*(λopt), cm·Hz1/2/W≥2.2×109≥2.2×109
Electrical parameters
Voltage responsivity Rv(λpeak, RLoad = 1 MΩ), V/W≥3.5×104≥5.0×104
Voltage responsivity Rv(λopt, RLoad = 1 MΩ), V/W≥2.2×104≥4.6×104
Low cut-off frequency flo, HzDCDC
High cut-off frequency fhi, kHz≥400≥650
Output impedance Rout, Ω5050
Output voltage swing Vout (RLoad = 1 MΩ), V-1
(negative output)
-1
(negative output)
Output voltage offset Voff, mVDCmax -200max -200
Power supply voltage Vsup, VDC55
Other information
Active elements materialepitaxial HgCdTe heterostructure
Number of elements1×32 linear array
Active area of single element A, mm×mm0.125×10.1×0.1
Distance between active elements, µm2550
WindowpAl2O3AR
Acceptance angle Φ~70°
Ambient operating temperature Ta, °C10 to 30

應(yīng)用領(lǐng)域

  • CO2激光(10.6µm)測量

  • 激光功率監(jiān)控,激光束輪廓和定位

  • 激光校準

  • 光譜學(氣體檢測,呼吸分析)

  • 慢速和快速非接觸式溫度測量(鐵路運輸、工業(yè)和實驗室過程監(jiān)控)

  • 光學分揀系統(tǒng)

  • 激光束輪廓和定位

  • 火焰和爆炸檢測

  • 國防和安全

  • 燃燒過程控制




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